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| (R) STTH3L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM IR (max) Tj VF (typ) trr (typ) FEATURES AND BENEFITS 3A 600 V 100 A 175C 0.85 V 60 ns A K K A NC Ultrafast switching Low forward voltage drop Low thermal resistance Low leakage current (platinium doping) DO-201AD STTH3L06 DPAK STTH3L06B DESCRIPTION The STTH3L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device is intended for use as a free wheeling diode in power supplies and other power switching applications. Table 2: Order Codes Part Number STTH3L06 STTH3L06RL STTH3L06B STTH3L06B-TR STTH3L06U STTH3L06S Marking STTH3L06 STTH3L06 STTH3L06B STTH3L06B 3L6U S06 SMB STTH3L06U SMC STTH3L06S September 2005 REV. 3 1/10 STTH3L06 Table 3: Absolute Ratings (limiting values) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Parameter Repetitive peak reverse voltage DO-201AD / SMB / SMC DPAK DO-201AD DPAK SMB SMC IFSM Surge non repetitive forward current DO-201AD SMB / SMC DPAK Tstg Tj Storage temperature range Maximum operating junction temperature Tl = 100C Tl = 155C Tl = 80C Tl = 100C tp = 10ms sinusoidal 70 60 40 -65 to + 175 175 C C A Value 600 10 6 3 A Unit V A Table 4: Thermal Parameters Symbol Rth(j-l) Junction to lead Parameter DO-201AD DPAK SMB SMC Rth(j-a) Junction to ambient (see fig. 13) DO-201AD L = 10 mm L = 10 mm Maximum 20 5.5 25 20 75 C/W Unit C/W Table 5: Static Electrical Characteristics Symbol IR Parameter Reverse leakage current Test conditions Tj = 25C Tj = 150C VF Forward voltage drop Tj = 25C Tj = 150C To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.055 IF (RMS) Min. Typ Max. 3 Unit A VR = VRRM 15 IF = 3A 0.85 2 100 1.3 1.05 V Table 6: Dynamic Characteristics Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25C Tj = 25C Test conditions IF = 1A dIF/dt = -50 A/s VR =30V IF = 3A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 3A dIF/dt = 100 A/s Min. Typ Max. Unit 60 85 100 7.5 ns ns V 2/10 STTH3L06 Figure 1: Conduction losses versus average current P(W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 100.0 Figure 2: Forward voltage drop versus forward current IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 Tj=150C (maximum values) =1 Tj=25C (maximum values) 10.0 Tj=150C (typical values) T IF(AV)(A) =tp/T tp 0.1 0.0 0.5 1.0 VFM(V) 1.5 2.0 2.5 3.0 3.5 Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy printed circuit FR4, Lleads = 10mm, SCU=1cm2) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Single pulse Figure 4: Peak reverse recovery current versus dI F /dt (typical values) IRM(A) 20 18 16 VR=400V Tj=125C IF=2 x IF(AV) DPAK SCu = 1cm2 SMC SCu = 1cm2 SMB SCu = 1cm2 DO-201AD Lleads = 10mm 14 12 10 IF=0.25 x IF(AV) IF=0.5 x IF(AV) IF=IF(AV) 8 6 4 0.2 0.1 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 tp(s) 2 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values) trr(ns) 700 VR=400V Tj=125C Figure 6: Reverse recovery charges versus dIF/ dt (typical values) Qrr(nC) 500 450 400 VR=400V Tj=125C IF=2 x IF(AV) 600 500 400 IF=2 x IF(AV) 350 300 250 IF=IF(AV) IF=0.5 x IF(AV) IF=IF(AV) 300 200 100 IF=0.5 x IF(AV) 200 150 100 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 50 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 3/10 STTH3L06 Figure 7: Softness factor versus dIF/dt (typical values) S factor 2.0 1.8 1.6 1.4 0.75 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 180 200 0.25 IF=IF(AV) VR=400V Reference: Tj=125C QRR IF=IF(AV) VR=400V Tj=125C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.25 S factor 1.00 IRM 0.50 Tj(C) dIF/dt(A/s) 0.00 25 50 75 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 IF=IF(AV) Tj=125C Figure 10: Forward recovery time versus dIF/dt (typical values) tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C dIF/dt(A/s) 20 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Figure 11: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C Figure 12: Thermal resistance junction to ambient versus copper surface under lead (epoxy FR4, eCU=35m) (DO-201AD) Rth(j-a)(C/W) 80 70 60 DO-201AD 50 10 40 30 20 10 VR(V) 1 1 10 100 1000 0 0.0 0.5 1.0 1.5 2.0 SCU(cm) 2.5 3.0 3.5 4.0 4.5 5.0 4/10 STTH3L06 Figure 13: Thermal resistance junction to ambient versus copper surface under lead (epoxy FR4, eCU=35m) (SMB / SMC) Rth(j-a)(C/W) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SMB Figure 14: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35m) (DPAK) Rth(j-a)(C/W) 100 90 80 70 SMC 60 50 DPAK 40 30 20 SCU(cm) 10 0 0 5 10 15 SCU(cm) 20 25 30 35 40 Figure 15: Thermal resistance versus lead length Rth(C/W) 100 DO-201AD 90 80 70 60 50 40 Rth(j-l) Rth(j-a) 30 20 10 0 5 10 15 20 25 Llead(mm) 5/10 STTH3L06 Figure 16: DPAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 typ. 0.031 typ. 0.60 1.00 0.023 0.039 0 8 0 8 REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Figure 17: DPAK Foot Print Dimensions (in millimeters) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/10 STTH3L06 Figure 18: SMB Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L Figure 19: SMB Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 7/10 STTH3L06 Figure 20: SMC Package Mechanical Data DIMENSIONS REF. E1 Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 A1 D 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 A2 b E c E A1 E1 C L A2 b E2 D L Figure 21: SMC Foot Print Dimensions (in millimeters) 3.3 2.0 4.2 2.0 8/10 STTH3L06 Figure 22: DO-201AD Package Mechanical Data DIMENSIONS B A B OC REF. Millimeters Min. Max. 9.50 25.40 5.30 1.30 1.25 Min. Inches Max. 0.374 1.000 0.209 0.051 0.049 note 1 E E note 1 OD OD A B C D E note 2 1 - The lead diameter o D is not controlled over zone E within the device NOTES 2 - The minimum axial lengthbent at whichangles is may be placed with its leads right 0.59"(15 mm) In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering Information Ordering type STTH3L06 STTH3L06-RL STTH3L06B STTH3L06B-TR STTH3L06U STTH3L06S Marking STTH3L06 STTH3L06 STTH3L06B STTH3L06B 3L6U S06 Package DO-201AD DO-201AD DPAK DPAK SMB SMC Weight 1.12 g 1.12 g 0.3 g 0.3 g 0.11 g 0.243 g Base qty 600 1900 75 2500 2500 2500 Delivery mode Ammopack Tape & reel Tubel Tape & reel Tape & reel Tape & reel Epoxy meets UL94, V0 Band indicated cathode (DO-201AD) Bending method: see application note AN1471 (DO-201AD) Table 8: Revision History Date October-2001 07-Sep-2004 14-Oct-2005 Revision 1 2 3 First issue SMB, SMC and DPAK packages added Changed marking of STTH3L06U from 3L06U to 3L6U. Added ECOPACK statement Description of Changes 9/10 STTH3L06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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